| Growth and optical properties of a-plane AlN and Al rich AlN/AlxGa1-xN quantum wells grown on r-plan | T. M. Al tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang | | | |
| Hybrid AlN-SiC deep ultraviolet Schottky barrier photodetectors
| R. Dahal, T. M. Al Tahtamouni, Z. Y. Fan, J. Y. Lin, H. X. Jiang | | | |
| Correlation between growth polarity and material quality of high-Al-content AlGaN alloys
| T. M. Al tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang | | | |
| Growth and optical properties of c-plane Al rich AlN/AlGaN Quantum wells
| T. M. Al tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang | | | |
| Growth and optical properties of c-plane Al rich AlN/AlGaN Quantum wells
| T. M. Al tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang | | | |
| Growth and Fabrication of III-Nitride Deep Ultraviolet Emitters | T. M. Altahtamouni, M. L. Nakarmi, M. Khizar , Z.Y. Fan, J. Y. Lin, H. X. Jiang | | | |
| Controlled Synthesis of Vertically-Oriented MoS2 Flakes by Chemical Vapor Deposition: Morphological Evolution and Growth Mechanism | Talal Al tahtamouni | | | ---- |
| MOCVD Growth and Characterization of Er Doped III‐Nitride Epilayers and Quantum Well Structures | T. M. Al Tahtamouni; J. Y. Lin, H. X. Jiang | | | ---- |
| Telecommunication‐Wavelength Lasing in Er‐doped GaN Multiple Quantum Wells at Room Temperature | V. Ho, T. Al Tahtamouni; Y. Wang; H. Jiang; J. Lin; J. Zavada; N. Vinh | | | ---- |
| Effect of TMAl pretreatment of sapphire substrate on the properties of MOCVD grown AlN epilayers | T. M. Al tahtamouni, Haiding Sun, Feng Wu, Nasir Alfaraj, Kuang‐Hui Li, Xiaohang Li | | | ---- |
| Strain and compositional analysis of BAlN/Al(Ga)N structures for distributed Bragg reflector applications | Haiding Sun, Feng Wu, T. M. Al tahtamouni, Nasir Alfaraj, Theeradetch Detchprohm, Russel D. Dupuis, Xiaohang Li | | | ---- |
| Study of TMAl‐induced carbon impurity on AlN film polarity and growth mode on sapphire | Sun, Feng Wu, Talal M. Altahtamouni, Nasir Alfaraj, Theeradetch Detchprohm, Russell D. Dupuis, Xiaohang Li | | | ---- |
| Investigation of Microstructure, Strain and Defect of BAlN/Al(Ga)N Heterostructures | H. Sun, F. Wu, T. M. Al tahtamouni, D. H. Anjum, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, | | | ---- |
| Structural Properties and Growth Modes of MOCVD‐Grown AlN with TMAl Pretreatment of Sapphire Substrate | H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li | | | ---- |
| Control of polarity, crystal quality and growth mode of AlN films by MOCVD | H. Sun, F. Wu, Y. J, Park, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li | | | ---- |
| Structural characterizations of high B‐content BAlN/Al(Ga)N heterostructures grown by MOCVD | H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li | | | ---- |
| High n‐Type Conduction in Si‐Doped Al0.84Ga0.16N Epilayers for Deep Ultraviolet Emitters | T. M. Al tahtamouni, J. Li | | | ---- |
| 1.54 μm light emitting devices based on Er‐doped GaN/AlGaN multiple quantum well structures grown by metalorganic chemical vapor deposition | T. M. Al tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang | | | ---- |