Yarmouk University Academic Profile

Conference

Conference	Date	Title	Authors	Inventor
On the Subthreshold Measurements of SIC MOSFETs	Idrees S Al-kofahi
On the slow state generation after substrate hole injection in p-MOSFETs	Idrees S Al-kofahi
Current density dependence of trap generation in the gate oxide of n-MOSFETs during low field substr	I. S. Al-Kofahi, S. Taylor and C. Beech
Structure dependence of uniform electron injection during substrate electron injection	I. S. Al-Kofahi, S. Taylor and K. Nuttall
Temperature dependence of subthreshold currents in 6H-SiC MOSFETs	S. Taylor, I. S. Al-Kofahi and L. A. Lipkin
The enhanced degradation of MOSFETs damaged by hot holes	I. S. Al-Kofahi, J. F. Zhang and G. Groeseneken
On the hot hole induced post-stress interface trap generation in MOSFET’s	I. S. Al-Kofahi, J. F. Zhang and G. Groeseneken
Interface state generation post substrate hot hole injection	I. S. Al-Kofahi, J. F. Zhang, and G. Groeseneken
Correlation Between Fast and Slow States Observed Post Substrate Hole Injection in P-MOSFETs	I. S. Al-kofahi